Evolution of arsenic in high fluence plasma immersion ion implanted silicon: Behavior of the as-implanted surface
نویسندگان
چکیده
منابع مشابه
DIFFUSION OF SILICON IN ION IMPLANTED GaAs
Silicon is the main n-type dopant used in GaAs, and it is usually incorporated into GaAs by ion implantation or by diffusion employing an external source. Ion implantation is also the only convenient way of introducing impurities exceeding the solid solubility limit. However, ion implantation studies have been done earlier only for concentrations under 10 atoms/cm [1,2]. Experimentally it has b...
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OBJECTIVE To gain basic information regarding the biologic stability of plasma ion-implanted miniscrews and their potential clinical applications. METHODS Sixteen plasma ion-implanted and 16 sandblasted and acid-etched (SLA) miniscrews were bilaterally inserted in the mandibles of 4 beagles (2 miniscrews of each type per quadrant). Then, 250 - 300 gm of force from Ni-Ti coil springs was appli...
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چکیده هدف از پژوهش حاضر بررسی رابطه کیفیت زندگی کاری و رفتار شهروندی سازمانی در مدارس مقطع متوسطه پسرانه شهر تهران از دیدگاه دبیران بود. روش پژوهش حاضر توصیفی و از نوع همبستگی بود. از بین دبیران مدارس شهر تهران تعداد 380 نفر به روش نمونه گیری خوشه ای چند مرحله ای به عنوان نمونه پژوهش انتخاب شدند و با تکمیل پرسشنامه ی کیفیت زندگی کاری والتون(1975) و پرسشنامه ی رفتار شهروندی سازمانی پودساکو...
15 صفحه اولDetermination of complex dielectric functions of ion implanted and implanted-annealed amorphous silicon by spectroscopic ellipsometry
Measuring with a spectroscopic ellipsometer (SE) in the 1.845 eV photon energy region we determined the complex dielectric function (E = e1 + ieZ> of different kinds of amorphous silicon prepared by self-implantation and thermal relaxation (500 “C, 3 h) . These measurements show that the complex dielectric function (and thus the complex refractive index) of implanted a-Si (i-a-Si) differs from ...
متن کاملCharacterization of High-energy Heavy-ion Implanted
BB-65 MeV ion implantation into InP compound semiconductor crystals with 5 MeV nitrogen ions has been investigated. The subsequent characterization was undertaken by a variety of techniques such as nuclear resonant reaction analysis, channeling Rutherford backscattering spectrometry, x-ray rocking curve measurement, and cross-sectional transmission electron microscopy. These techniques have cle...
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ژورنال
عنوان ژورنال: Applied Surface Science
سال: 2015
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2015.07.068